Electron conduction in two-dimensional GaAs1-yNy channels -: art. no. 153305

We study the conductivity of a two-dimensional electron gas in modulation-doped n-type GaAs1-yNy/(AlGa)As quantum well heterostructures. We find that the nature of the electrical conduction in the GaAs1-yNy channel is band-like or hopping-like depending on N content, carrier concentration, and temperature. We show that when there is a sufficient carrier concentration in the channel, the conduction occurs through the extended conduction band states of GaAs1-yNy. In this band conduction regime the electron mobility is shown to be limited by electron scattering by nitrogen atoms. This mechanism dominates over inelastic collisions by phonons even at room temperature.