期刊
NANOTECHNOLOGY
卷 15, 期 4, 页码 S197-S200出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/15/4/014
关键词
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Nanostructuring of metallic and semiconductor surfaces in the sub-100 nm range is a key point in the development of future technologies. In this work we describe a simple and low-cost method for metal nanostructuring with 50 nm lateral and 6 nm vertical resolutions based on metal film deposition on a silane-derivatized nanostructured silicon master. The silane monolayer anti-sticking properties allow nanopattern transfer from the master to the deposited metal films as well as easy film detachment. The method is non-destructive, allowing the use of the derivatized master several times without damaging. Potential applications of the method are in the field of high-density data storage, heterogeneous catalysis and electrocatalysis, microanalysis (sensors and biosensors) and new optical devices.
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