期刊
PHYSICAL REVIEW B
卷 69, 期 16, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.69.161301
关键词
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The distribution of the fine-structure splitting (h) over bar delta(1) and of the biexciton binding energy (h) over bar delta(B) are measured in a series of annealed InAs quantum dots. We find a decrease of (h) over bar delta(1) from 96 mueV to 6 mueV with increasing annealing temperature, indicating a symmetrizing of the in-plane confinement potential. The biexciton binding energy shows only a weak dependence on the confinement energy, which we attribute to a compensation between decreasing confinement and decreasing separation of electron and hole.
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