Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures

We report the detection of novel zero-resistance states induced by electromagnetic wave excitation in ultra high mobility GaAs/AlGaAs heterostructure devices, at low magnetic fields, B, in the large filling factor limit. Vanishing resistance is observed in the vicinity of B = [4/(4j + 1)]B-f, where B-f = 2pifm*/e, where m* is the effective mass, e is the charge, and f is the microwave frequency. The dependence of the effect is reported as a function of f, the temperature, and the power. (C) 2003 Elsevier B.V. All rights reserved.