Electrical characterization of TiO2 gate oxides on strained-Si

The electrical properties of low temperature (150 degreesC) plasma deposited TiO2 gate dielectrics on strained-Si are reported. The deposited films have been analyzed by X-ray photoelectron spectroscopy for chemical composition. The interfacial and electrical properties of the deposited films have been characterized using a metal-insulator-semiconductor (MIS) capacitor structure. The charge trapping properties in TiO2 gate dielectrics have been studied using constant current stressing. The leakage current has been found to be dominated by the Poole-Frenkel emission. (C) 2004 Elsevier B.V. All rights reserved.