期刊
APPLIED PHYSICS LETTERS
卷 84, 期 14, 页码 2593-2595出版社
AMER INST PHYSICS
DOI: 10.1063/1.1695197
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The transverse resistivity in thin films of La0.84Sr0.16MnO3 (LSMO) exhibits sharp field-symmetric jumps below T-C. We show that a likely source of this behavior is the giant planar Hall effect combined with biaxial magnetic anisotropy. The effect is comparable in magnitude to that observed recently in the magnetic semiconductor Ga(Mn)As. It can be potentially used in applications such as magnetic sensors and nonvolatile memory devices. (C) 2004 American Institute of Physics.
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