期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 43, 期 4B, 页码 L588-L590出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.43.L588
关键词
tunnel magnetoresistance; TMR effect; magnetic tunnel junction; MRAM; epitaxial growth
We fabricated fully epitaxial Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions (MTJs) and observed a magnetoresistance (MR) ratio of 88% at T = 293 K (146% at T = 20 K), the highest value yet reported. The origin of the high MR ratio is not the diffusive tunneling' of Julliere's model but the coherent spin-polarized tunneling in epitaxial MTJs, in which only the electrons with totally symmetric wave functions with respect to the barrier-normal axis can tunnel. The bias-voltage dependence of the MR was very small, resulting in a high output voltage of 380 mV. This high voltage will help overcome problems in the development of high-density magnetoresistive random-access-memory (MRAM).
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