期刊
APPLIED PHYSICS LETTERS
卷 84, 期 16, 页码 3136-3138出版社
AMER INST PHYSICS
DOI: 10.1063/1.1715152
关键词
-
Ba(Zr(0.35)Tt(0.65))O-3 (BZT) thin films were deposited via a sol-gel process on Pt-coated silicon substrates. The BZT films were in the perovskite phase and had polycrystalline structure. Temperature-dependent dielectric measurements revealed that the thin films have relaxor behavior and diffuse phase transition characteristics. The tunability K of the dielectric constant (at 600 kV/cm) is about 40% in the temperature range of 179-293 K. The improved temperature stability from this BZT thin film is beneficial to applications requiring a wide range of operating temperatures, thereby eliminating the need for environmental controls. Although the K value is not extraordinarily large compared to (Ba,Sr)TiO3, the low dielectric constant of BZT is attractive for microwave frequency applications. This provides an additional possibility in balancing K and dielectric constant through materials engineering for optimum device performance. (C) 2004 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据