期刊
APPLIED PHYSICS LETTERS
卷 84, 期 17, 页码 3301-3303出版社
AMER INST PHYSICS
DOI: 10.1063/1.1723695
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We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm(2)/V s for the p-type conductivity in the WSe2-based FETs at room temperature). These FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in flexible electronics. (C) 2004 American Institute of Physics.
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