期刊
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
卷 73, 期 5, 页码 1267-1272出版社
PHYSICAL SOC JAPAN
DOI: 10.1143/JPSJ.73.1267
关键词
hexagonal BaTiO3; high pressure; resistivity; metal-insulator transition; structural phase transition
The dc electrical resistivity rho in the reduced hexagonal BaTiO2.98 single crystal was measured under hydrostatic pressures up to 3.1 GPa in the temperature range of 5 K to 300 K. The p along the hexagonal c axis is somewhat larger than that of the perpendicular direction. The rho vs T curve changes the behavior at the temperature To, where the hexagonal to orthorhombic phase transition takes place: it behaves as a semiconductor and a metal at temperatures below and above T-0, respectively. With increasing pressure To decreases, and the metallic behavior dominates whole of the temperature range at pressures above p(c) = 1.9 GPa. In the pressure-induced metallic phase, T-2-dependence of resistivity appears at low temperatures. This rule suggests that electrons in the Ti 3d band of BaTiO3 are the same as electrons in a strongly correlated electron system. A band model is proposed to explain such insulator-metal transitions in SrTiO3, cubic BaTiO3, and hexagonal BaTiO3.
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