期刊
MICROELECTRONIC ENGINEERING
卷 71, 期 3-4, 页码 277-282出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2004.01.041
关键词
nanoimprint; photolithography; near-field effect; nanopatterning
We propose a new lithography technique that combines the advantages of nanoimprint lithography (NIL) and photolithography. In this combined-nanoimprint-and-photolithography (CNP) technique, we introduce a hybrid mask-mold made from UV transparent material and with a light-blocking metal layer placed on top of the mold protrusions. We demonstrate that the CNP method using such a hybrid mold can achieve resist patterns without residual layer, and the resist patterns can have higher aspect ratio than the feature on the mold. In addition, the photoresist used in the CNP technique can provide higher etching durability compared with thermal plastic polymers that are commonly used in NIL. (C) 2004 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据