期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 33, 期 5, 页码 450-455出版社
SPRINGER
DOI: 10.1007/s11664-004-0201-z
关键词
silicon carbide; SiC; defect characterization; threading defects; micropipe; screw dislocation
This study presents a nondestructive and in-depth defect characterization method, based on the principle of polarized light microscopy (PLM), which can be used to quickly evaluate SiC substrates and epilayers. The developed PLM system has the capability to map, on a wafer scale, micropipes, elementary screw dislocations, and domain boundaries in SiC wafers. One unique feature of the PLM system is the ability to characterize the wafer with and without an epilayer, providing a newly found opportunity to investigate threading defect propagation in the overgrown epilayer. The correlation between SiC substrate defects and epilayer defects will be established.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据