High metal-insulator transition temperature in La1-xSrxMnO3 thin films grown in low oxygen partial pressure by molecular beam epitaxy

We grew La1-xSrxMnO3 films by MBE carefully controlling the rates of La, Sr and Mn, using substrate temperature of about 700degreesC and low partial pressure (congruent to2 x 10(-5) Torr) Of O-2+5% Ozone. RHEED analysis were performed to check in situ the structural properties of the films. Samples on different substrates and with different thickness have been fabricated to investigate the effects of the epitaxial strain on the magnetotransport properties. (C) 2004 Elsevier B.V. All rights reserved.