期刊
IEEE ELECTRON DEVICE LETTERS
卷 25, 期 5, 页码 241-243出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2004.826543
关键词
30-nm gate; cutoff frequency (f(t)); high electron mobility transistor (HEMT); InGaAs-InAlAs; InP; pseudomorphic channel; source-drain resistance
We fabricated 30-nm gate pseudomorphic channel In0.7Ga0.3As-In0.52Al0.48As high electron mobility transistors (HEMTs) with reduced source and drain parasitic resistances. A multilayer cap structure consisting of Si highly doped n(+)-InGaAs and n(+)-InP layers was used to reduce these resistances while enabling reproducible 30-nm gate process. The HEMTs also had a laterally scaled gate-recess that effectively enhanced electron velocity, and an adequately long gate-channel distance of 12 nm to suppress gate leakage current. The transconductance (g(m)) reached 1.5 S/mm, and the off-state breakdown voltage (BVgd) defined at a gate current of -1 mA/mm was -3.0 V. An extremely high current gain cutoff frequency (f(t)) of 547 GHz and a simultaneous maximum oscillation frequency (f(max)) of 400 GHz were achieved: the best performance yet reported for any transistor.
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