Modified Deal Grove model for the thermal oxidation of silicon carbide

A modified Deal Grove model for the oxidation of 4H-SiC is presented, which includes the removal of the carbon species. The model is applied to data on the oxidation rates for the (0001) Si, (000 (1) over bar) C, and (11 (2) over bar0) a faces, which are performed in 1 atm dry oxygen and in the temperature range 950-1150 degreesC. Analysis within the model provides a physical explanation for the large crystal-face dependent oxidation rates observed. (C) 2004 American Institute of Physics.