期刊
SOLID STATE COMMUNICATIONS
卷 130, 期 6, 页码 373-377出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2004.02.032
关键词
thin films; ferroelectric; dielectric resonance
Antiferroelectric PbZrO3 thin films were grown oil Pt/Ti/SiO2/Si Substrates with predominant (111) orientation using a sol-gel process. The Pt/PbZrO3/Pt film capacitor showed well-saturated hysteresis loops at an applied voltage of 5 V with remanent polarisation (P-r) and coercive electric field (E-c) values of 8.97 muC/cm(2) and 162 kV/cm. respectively. The leakage current density of the highly (111)-oriented PbZrO3 film was less than 1.0 X 10(-7) A/cm(2) over electric field ranges from 0 to 105 kV/cm. The conduction current depended oil the voltage polarity. The PbZrO3/Pt interface forms a Schottky barrier at electric fields from 20 to 160 kV/cm. The dielectric relaxation current behaviour Of Pt/PbZrO3/Pt capacitor obeys the well-known Curie-Von Schweidler law at electric field of 20-80 kV/cm, file Currents have contributions of both dielectric relaxation Current and leak-age Current. (C) 2004 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据