期刊
IEEE ELECTRON DEVICE LETTERS
卷 25, 期 5, 页码 337-339出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2004.827643
关键词
extrinsic states; Fermi pinning; metal gate; thermal stability; work function
The dependence of the metal-gate work function on the annealing temperature is experimentally studied. We observe increased Fermi-level pinning of the metal-gate work function with increased annealing temperature. This effect is more significant for SiO2 than for HfO2 gate dielectric. A metal-dielectric interface model that takes the role of extrinsic states into account is proposed to explain the work function thermal instability. This letter provides new understanding on work function control for metal-gate transistors and on metal-dielectric interfaces.
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