期刊
APPLIED PHYSICS LETTERS
卷 84, 期 18, 页码 3477-3479出版社
AMER INST PHYSICS
DOI: 10.1063/1.1737796
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We report on a direct measurement of two-dimensional potential distribution on the surface of photovoltaic Cu(In,Ga)Se-2 thin films using a nanoscale electrical characterization of scanning Kelvin probe microscopy. The potential measurement reveals a higher surface potential or a smaller work function on grain boundaries of the film than on the grain surfaces. This demonstrates the existence of a local built-in potential on grain boundaries, and the grain boundary is positively charged. The local built-in potential on the grain boundary is expected to increase the minority-carrier collection area from one to three dimensional. In addition, a work function decrease induced by Na on the film surface was observed. (C) 2004 American Institute of Physics.
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