期刊
APPLIED PHYSICS LETTERS
卷 84, 期 18, 页码 3552-3554出版社
AMER INST PHYSICS
DOI: 10.1063/1.1719272
关键词
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Recent advances in solid-state detector (SSD) technology have demonstrated the detection of ions and electrons down to 1 keV. However, ions at keV energies lose a substantial amount of energy Delta(N) in a SSD through Coulombic interactions with target nuclei rather than through interactions that contribute to the SSD output pulse, whose magnitude is a measure of the ion's incident energy. Because Delta(N) depends on the ion species, detector material, and interaction physics, it represents a fundamental limitation of the output pulse magnitude of the detector. Using 100% quantum collection efficiency silicon photodiodes with a thin (40-60 Angstrom) SiO2 passivation layer, we accurately quantify Delta(N) for incident 1-120 keV ions and, therefore, evaluate the detection limits of keV ions using silicon detectors. (C) 2004 American Institute of Physics.
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