4H-SiC oxynitridation for generation of insulating layers

This paper describes the present state of a nitrogen-based passivation for SiO2 layers on 4H-SiC. Interface state density, oxide breakdown field, channel mobility and gate oxide reliability have been characterized following nitric oxide (NO) passivation anneals. The kinetics of nitrogen incorporation and the quantitative modelling between nitrogen content and interface trap density with NO anneals have also been discussed.