期刊
APPLIED PHYSICS LETTERS
卷 84, 期 19, 页码 3894-3896出版社
AMER INST PHYSICS
DOI: 10.1063/1.1738946
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Based on first-principles theoretical calculations, we investigate the hydrogenation effect on the defect properties of oxygen vacancies (V-O) in HfO2. A defect complex of V-O and H behaves as a shallow donor for a wide range of Fermi levels, with a positive charge state, and this complex is energetically stable against its dissociation into V-O and H. We suggest that the V-O-H complex is responsible for the formation of positive fixed charges, which neutralize negative fixed charges during the postannealing process of SiOx/HfO2 stack. (C) 2004 American Institute of Physics.
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