期刊
APPLIED PHYSICS LETTERS
卷 84, 期 19, 页码 3909-3911出版社
AMER INST PHYSICS
DOI: 10.1063/1.1739515
关键词
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We have used molecular dynamics simulations to examine the possibility of amorphizing silicon carbide (SiC) by exclusively displacing C atoms. At a defect generation corresponding to 0.2 displacements per atom, the enthalpy surpasses the level of melt-quenched SiC, the density decreases by about 15%, and the radial distribution function shows a lack of long-range order. Prior to amorphization, the surviving defects are mainly C Frenkel pairs (67%), but Si Frenkel pairs (18%) and antisite defects (15%) are also present. The results indicate that SiC can be amorphized by C sublattice displacements. Chemical short-range disorder, arising mainly from Frenkel pair production, plays a significant role in the amorphization. (C) 2004 American Institute of Physics.
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