期刊
APPLIED PHYSICS LETTERS
卷 84, 期 21, 页码 4176-4178出版社
AMER INST PHYSICS
DOI: 10.1063/1.1755846
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n- and p-type Ge nanowires were synthesized by a multistep process in which axial elongation, via vapor-liquid-solid (VLS) growth, and doping were accomplished in separate chemical vapor deposition steps. Intrinsic, single-crystal, Ge nanowires prepared by Au nanocluster-mediated VLS growth were surface-doped in situ using diborane or phosphine, and then radial growth of an epitaxial Ge shell was used to cap the dopant layer. Field-effect transistors prepared from these Ge nanowires exhibited on currents and transconductances up to 850 muA/mum and 4.9 muA/V, respectively, with device yields of >85%. (C) 2004 American Institute of Physics.
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