MBE growth and characterization of HgTe based quantum wells and superlattices

The MBE growth of type III HgTe/Hg1-x CdxTe heterostructures will be discussed. Spin-Orbit (s-o) coupling is particularily large in HgTe based quantum wells; the observed value of 17 meV is at least two to three times larger than values reported in the literature for III-V heterostructures or any other system. Rashba spin-orbit splitting in n type modulation doped quantum wells (QWs) has been investigated as a function of the 2DEG density and compared with self-consistent Hartree calculations based on an 8 x 8 k (.) p model. Furthermore the presence of two periodic SdH oscillations in p type QWs with an inverted band structure has been observed and is the first direct evidence that these heterostructures are indirect semiconductors. (C) 2003 Elsevier B.V. All rights reserved.