期刊
IEEE ELECTRON DEVICE LETTERS
卷 25, 期 6, 页码 408-410出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2004.828570
关键词
atomic layer deposition (ALD); CMOS transistors; Hafnium Oxide (HfO2); high-kappa dielectric; metal-gate electrode; remote phonons
We show experimental evidence of surface phonon scattering in the high-kappa dielectric being the primary cause of channel electron mobility degradation. Next, we show that midgap TiN metal-gate electrode is effective in screening phonon scattering in the high-kappa dielectric from coupling to the channel under inversion conditions, resulting in improved channel electron mobility. We then show that other metal-gate electrodes, such as the ones with n+ and p+ work functions, are also effective in improving channel mobilities to close to those of the conventional SiO2/poly-Si stack. Finally, we demonstrate this mobility degradation recovery translates directly into high drive performance on high-kappa/metal-gate CMOS transistors with desirable threshold voltages.
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