4.6 Article

Ising quantum Hall ferromagnetism in InSb-based two-dimensional electronic systems

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PHYSICAL REVIEW B
卷 69, 期 23, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.69.235315

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We report on the observation of Ising quantum Hall (QH) ferromagnetism in two-dimensional electronic systems based in single InSb/InAlSb quantum wells. Magneto-transport experiments in tilted magnetic fields reveal the preservation of the nu=2 and nu=3 QH states over the range in tilt angles where the single particle gap is expected to collapse for a noninteracting system. These preserved QH states are accompanied by broad resistance peaks which move towards higher filling factors as the tilt angle is increased and which display hysteresis. The maximum in the amplitude of these resistance peaks grows with increasing temperature and is activated as exp(-1/rootT).

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