Sub-100-nm photolithography based on plasmon resonance

Sub-100-nm patterns have been patterned photolithographically using metallic masks with the exposure wavelength of 436 nm. Preliminary numerical simulations indicate a practical resolution limit for the lithographic process. The near-field distribution of light can be optimized to fabricate nanostructures including isolated nano-dots or nano-lines by changing the parameters of the mask. The results show the potential of plasmon lithography for attaining Subwavelength features.