期刊
JOURNAL OF APPLIED PHYSICS
卷 95, 期 11, 页码 6714-6716出版社
AMER INST PHYSICS
DOI: 10.1063/1.1667433
关键词
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Ni-Fe asymmetric ring dots with partially planed outer sides were investigated as candidates for high-density magnetic memory cells. The magnetic states, which were measured with magnetic force microscopy, show that in-plane magnetic fields can control the chirality, either clockwise or counterclockwise, of vortical magnetizations of the Ni-Fe asymmetric ring dots. This control facilitates applying ring dots to the magnetic random access memories. (C) 2004 American Institute of Physics.
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