期刊
MATERIALS TODAY
卷 7, 期 6, 页码 42-51出版社
ELSEVIER SCI LTD
DOI: 10.1016/S1369-7021(04)00288-3
关键词
-
资金
- Japan Science and Technology Agency
This article reviews transparent oxide optoelectronic devices based on our efforts focusing on transparent thin-film transistors fabricated from single-crystalline films of InGaO3(ZnO)(5) with a natural superlattice structure, near-ultraviolet (UV) emitting diodes composed of heteroepitaxially grown p-type SrCu2O2 and n-type ZnO, and single-crystalline NiO and ZnO pn-heterojunction diode UV detectors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据