Magnetic resonant x-ray scattering at the GaK edge in UGa3:: A band theoretical approach -: art. no. 224402

Magnetic resonant x-ray scattering (MRXS) at the K edge of Ga in an antiferromagnetic phase of UGa3 is studied on the basis of a band-structure calculation. With taking into account the spin-orbit interaction, we obtain a strong resonant peak near the K edge of Ga. We find that a relatively large orbital polarization in the unoccupied states of the Ga 4p band is induced by the 5f orbital polarizations at neighboring U atoms through the Ga 4p, and U 5f hybridization, and thereby leading to the large MRXS intensity.