期刊
IEEE ELECTRON DEVICE LETTERS
卷 25, 期 6, 页码 354-356出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2004.829029
关键词
high-electron mobility transistors (HEMTs); InP; maximum oscillation frequency; transferred substrate
We report the fabrication and the de characterization of the first In0.52Al0.48As-In0.53Ga0.47As long double-gate (DG) high-electron mobility transistors (HEMTs). These devices have been obtained using a transferred substrate technique. Although the layer structure has not been optimized, a maximum extrinsic transconductance gm of 450 mS/mm is obtained. At the same bias voltage, the drain current I-d is 120 mA/mm, which gives a large ratio gm/I-d of 3.8 V-1, indicating the improvement of the charge control efficiency duo to the DG structure.
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