期刊
SOLID STATE COMMUNICATIONS
卷 130, 期 11, 页码 769-772出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2004.03.037
关键词
GaN nanoribbons; radio frequency magnetron sputtering; Ga2O3 thin film
Single crystalline GaN nanoribbons were synthesized through nitriding Ga2O3 thin films deposited on sapphire (0001) substrates by radio frequency magnetron sputtering. The component and structure of nanoribbons were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The flat and smooth ribbon-like nanostructures are high quality single crystalline hexagonal wurtzite GaN. The thickness and width-to-thickness ratio of the grown GaN nanoribbons are in the range of 8-15 nm and similar to5-10, respectively. (C) 2004 Elsevier Ltd. All rights reserved.
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