期刊
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
卷 13, 期 3, 页码 414-420出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2004.828740
关键词
Bi2Te3-compounds; semiconductor-device design; thermoelectric devices; thin-film structure; thin-film morphology
This paper describes the first thermoelectric devices based on the V-VI-compounds Bi2Te3 and (Bi, Sb)(2)Te-3 which can be manufactured by means of regular thin film technology in combination with microsystem technology. Fabrication concept, material deposition for some 10-mum-thick layers and the properties of the deposited thermoelectric materials will be reported. First device properties for Peltier-coolers and thermogenerators will be shown as well as investigations on long term and cycling stability. Data on metal/semiconductor contact resistance were extracted form device data. Device characteristics like response time for a Peltier-cooler and power output for a thermogenerator will be compared to commercial devices.
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