4.6 Article Proceedings Paper

Magnetic tunnel junctions - principles and applications

期刊

VACUUM
卷 74, 期 3-4, 页码 705-709

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2004.01.053

关键词

MTJ; MRAM; structure of copper interface layer

向作者/读者索取更多资源

Magnetic tunnel junctions (MTJs) have received much attention because of their potential use as non-volatile memory storage cells in magnetic random access memory and as advanced read sensors in hard disk drives. These applications necessitate stringent requirements on the materials and structure of the magnetic tunnel junctions. This paper briefly describes one aspect of the numerous recent developments in MTJ materials. In particular, we discuss structures with improved magnetic properties via insertion of ultra-thin non-magnetic nano-layers within the MTJ. (C) 2004 Elsevier Ltd. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据