SIMS depth profiling of SiGe:C structures in test pattern areas using low energy cesium with a Cameca IMS Wf

In this paper, we describe our utilization of SIMS to support development of new SiGe:C structures for BiCMOS industrial processes. The goal is to perform quantitative germanium and carbon depth profiles in test areas of 300 mum x 300 mum with optimum depth resolution and detection limits. (C) 2004 Elsevier B.V. All rights reserved.