期刊
CHEMISTRY OF MATERIALS
卷 16, 期 12, 页码 2449-2456出版社
AMER CHEMICAL SOC
DOI: 10.1021/cm031175l
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High-yield synthesis of germanium nanowires (NWs) and core-shell structures is achieved by the chemical vapor deposition (CVD) of dicyclopentadienyl germanium ([Ge(C5H5)(2)]). The one-dimensional (1D) nanostructures are formed on an iron substrate following a base-growth model in which an Fe-Ge epilayer functions as a catalytic bed. The wire growth is selective and no catalyst particles are observed at the tip of the NWs, which is contrary to the characteristic feature of a 1D growth based on the vapor-liquid-solid (VLS) mechanism. The diameter and length of the NWs were in the ranges 15-20 nm and 25-40 mum, respectively, as found by high-resolution electron microscopy. Both axial and radial dimensions of the NW's can be controlled by adjusting the precursor feedstock, deposition temperature, and size of alloy nuclei in the Fe-Ge epilayer. High precursor flux produced coaxial heterostructures where single-crystalline Ge cores are covered with an overlayer of nanocrystalline Ge. Single-crystal Ge nanowires exhibit a preferred growth direction [112] confirmed by X-ray and electron diffraction patterns. When compared to bulk Ge, the micro-Raman spectra of Ge NWs show a low field shift, probably due to the dimensional confinement. Patterned growth of Ge NWs was achieved by shadow-masking the Fe substrate with a carbon film, which prevents the formation of Fe-Ge nuclei, thereby inhibiting the nanowire growth.
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