Mobility studies of field-effect transistor structures based on anthracene single crystals

The charge carrier transport in anthracene single crystals has been studied by means of field-effect transistor (FET) structure. The FET mobility (mu(FET)) revealed the nonmonotonous, reliant on gate-voltage (V-g), temperature dependence with the maximum mu(FET)similar to0.02 cm(2)/V s at Tsimilar to170-180 K and V(g)similar to-30 V. At temperatures below 180 K the mobility decreases and becomes thermally activated with the V-g-dependent activation energy E(a)similar to40-70 meV governed by shallow traps. The space-charge-limited current is the dominant transport mechanism in FET structures based on anthracene single crystals. (C) 2004 American Institute of Physics.