Raman scattering and photoluminescence of As ion-implanted ZnO single crystal

We have converted the surface of undoped ZnO bulk into the As-doped p-ZnO layer by means of the As ion implantation method. After postimplantation annealing, the As-related properties were investigated by using Raman scattering and photoluminescence (PL) experiments. The Raman spectrum shows that the E-2(high) peak obtained from the As-doped p-ZnO shifted toward the higher energy side of 0.55 cm(-1) in comparison with that of the undoped ZnO bulk. This result is related to the stress increment of the sample surface due to the As implantation. After the As-implanted p-ZnO annealed at 800 degreesC, the PL spectroscopy reveals the neutral acceptor bound exciton emission (Adegrees,X) at 3.3589 eV. This emission shows a tendency to quench the intensity and extend the emission linewidth with increasing temperatures. Also, two As-related peaks associating with recombination emissions between free electrons and acceptor holes were observed at 3.3159 and 3.2364 eV. In addition, the I-V characteristic curves of the p-n homojunction fabricated with the As ion implantation method clearly have shown the behavior of the diode. (C) 2004 American Institute of Physics.