期刊
APPLIED SURFACE SCIENCE
卷 289, 期 -, 页码 27-32出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2013.10.071
关键词
ZnO; Atomic layer deposition; Stress; Band gap; Resistivity; Photoluminescence
类别
资金
- Fonds der chemischen Industrie (VCI) Frankfurt, Germany
- University of Cologne
- framework of German-South African bilateral collaboration through the International Bureau of BMBF [SUA 09/047]
ZnO thin films with high conductivity and high transparency were grown on Si (1 0 0) substrates by atomic layer deposition. Thickness dependent (43-225 nm) changes in crystallographic, optical and electrical properties are reported and discussed. Increase in film thickness caused a decrease in the bandgap by relaxation of stress in the plane of the film and led to an improvement in crystallinity and conductivity. The optical studies showed a noticeable change towards the contribution of excitonic and phonon replica to the UV-emission band. (C) 2013 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据