期刊
APPLIED SURFACE SCIENCE
卷 288, 期 -, 页码 411-415出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2013.10.048
关键词
Doped and co-doped ZnO thin films; Thermal annealing; DC sputteringa
We report a crucial change in structural properties which dramatically modified optical and electrical properties in annealed aluminium-boron and gallium-aluminum co-doped ZnO thin films grown using DC magnetron sputtering. Under vacuum, ambient films were annealed at 600 degrees C for 2 min and it was found that the transmission of annealed samples improved compared to pristine, doped, and co-doped ZnO thin films. The X-ray diffraction (XRD) patterns of pristine films exhibits a preferable growth orientation in < 002 > phases, however, after annealing signature of other peaks became prominent. Moreover, slender increase in crystallite size was also observed from XRD analysis. The surface morphology was studied using scanning electron microscopy (SEM). The surface morphology exhibits different structure which depending on the growth temperature was discussed in detail. The electrical properties viz. resistivity, mobility, and carrier concentration of both pristine and annealed ZnO thin films were measured at room temperature. An enhancement in the electrical properties of doped and co-doped ZnO thin films was noted after annealing. More significantly, it was found that annealed thin films showed the resistivity of the order similar to 10(-4) ohm cm with the enhanced optical transmittance. Such a transparent and conducting zinc-oxide thin film can be used as a window layer in solar cell. (C) 2013 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据