期刊
APPLIED SURFACE SCIENCE
卷 307, 期 -, 页码 525-532出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2014.04.069
关键词
GaN; Nonpolar; Nitridation; MOCVD; Raman spectra
类别
资金
- National Basic Research Program of China [2012CB619302, 2010CB923204]
- Science and Technology Bureau of Wuhan City [2014010101010003]
- National Natural Science Foundation of China [10990103, 51002058]
The effects of substrate nitridation on the growth of nonpolar a-plane GaN directly deposited on r-plane sapphire by metalorganic chemical vapor deposition (MOCVD) were investigated. Using nitridation, highquality a-plane GaN with flat surface was acquired. On the contrary, if the nitridation layer was removed, the epitaxial a-plane GaN exhibited deep triangular pits and poor crystalline properties. This could be attributed to the fact that uniform-distributed AIN grains were introduced by nitridation, which might act as the nucleation layer for the following a-plane GaN growth. The effects of substrate nitridation on the evolutions of anisotropic morphologies and crystalline properties were also studied by artificially interrupting the growth at different stages. The consequences suggested the nitridation layer could contribute to surface coalescence of a-plane GaN. The reasons responsible for this phenomenon were probed by Raman spectrum, and a model was proposed to explicate the effects of nitridation on the growth of a-plane GaN. (C) 2014 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据