期刊
JOURNAL OF APPLIED PHYSICS
卷 96, 期 1, 页码 916-918出版社
AMER INST PHYSICS
DOI: 10.1063/1.1738530
关键词
-
Ge thin films are grown on Si(001) substrates by molecular-beam epitaxy at 370 degreesC. The low-temperature epitaxial growth is compatible with the back-end thermal budget of current generation complementary metal-oxide-semiconductor technology, which is restricted to less than 450 degreesC. Reflection high-energy electron diffraction shows that single-crystal Ge thin films with smooth surfaces could be achieved below 450 degreesC. Double-axis x-ray theta/2theta scans also show that the epitaxial Ge films are almost fully strain-relaxed. As expected, cross-sectional transmission electron microscopy shows a network of dislocations at the interface. Hydrogen and oxide desorption techniques are proved to be necessary for improving the quality of the Ge films, which is reflected in improved minority carrier diffusion lengths and exceptionally low leakage currents. (C) 2004 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据