期刊
JOURNAL OF ELECTROCERAMICS
卷 13, 期 1-3, 页码 239-243出版社
SPRINGER
DOI: 10.1007/s10832-004-5105-z
关键词
BST; Ni doping; microwave; interdigital capacitor
Highly (100) preferred undoped and 1-5% Ni-doped Ba1-xSrxTiO3 (BST) thin films were deposited onto MgO (100) single crystal substrate at 750degreesC using pulsed laser deposition. BST thin film-based interdigital capacitors (IDC) were prepared by standard photolithography process. The microwave properties of BST films were measured at 10 GHz. Ni-doped BST films showed better dielectric properties by exhibiting improved dielectric Q while retaining an appropriate capacitance tuning compared to undoped BST films. 1% Ni-doped BST film showed the maximum figure of merit of 2896.1. It is suggested that 1 mol % Ni doped BST film is an effective candidate for high performance tunable device applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据