期刊
APPLIED SURFACE SCIENCE
卷 283, 期 -, 页码 297-303出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2013.06.104
关键词
CeO2; Thin film; Silicon; Silicon nitride; Interfacial reaction; XPS
CeO2 thin films were deposited on silicon and silicon nitride substrates by magnetron sputtering at room temperature and annealed at 400 and 600 degrees C in air and vacuum. Interaction between deposited CeO2 and Si in CeO2/Si and CeO2/Si3N4 systems was investigated by XPS. The results show that Ce is present as both Ce4+ and Ce3+ oxidation states in CeO2 film deposited on Si substrate, whereas Ce4+ is the main species in as-deposited CeO2/Si3N4 film. Detailed analyses of Ce3d, Si2p and O1s core level spectra demonstrate that Ce2O3 and SiOx or cerium silicate type of species are formed at the interface of CeO2 and Si. Concentrations of Ce3+ species increase drastically in CeO2/Si thin films after annealing at 400 degrees C in vacuum due to enhanced interfacial reaction. On the other hand, interfacial reaction between CeO2 and Si3N4 substrate is limited in as-deposited as well as heat treated films. (c) 2013 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据