期刊
APPLIED SURFACE SCIENCE
卷 285, 期 -, 页码 211-214出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2013.08.038
关键词
Sapphire; Step-terrace structure; Morphology evolution; Plasma treatment; Atomic force microscopy
类别
资金
- National Basic Research Program of China (973 Program) [2011CB013200]
- Natural Scientific Research Innovation Foundation in Harbin Institute of Technology [HIT.NSRIF.2009/20]
- Specialized Research Fund for the Doctoral Program of Higher Education [20102302120035]
- State Key Laboratory of Surface Physics and Department of Physics of Fudan University [KL2011_07]
Evolution of step-terrace (vicinal or stepped) structure of cleaned c-plane sapphire substrates irradiated with low-pressure air plasma (18 W/12 MHz) was studied with atomic force microscopy (AFM). Depending on plasma irradiation time and post-annealing treatment, original structure with uniform terrace width and sharp steps undergoes distinct morphology changes. With longer plasma irradiation up to 30 mm, we observed pairing of neighboring terraces into alternating wider and narrower terraces, steps roughening and terrace etching, and step-terrace free morphology with etched pits which are stable against annealing. These phenomena are discussed in terms of surface diffusion and chamber temperature effects. The findings reported here will have important implications for plasma modification and contamination control of sapphire substrates. (C) 2013 Elsevier B.V. All rights reserved.
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