期刊
JOURNAL OF APPLIED PHYSICS
卷 96, 期 1, 页码 224-228出版社
AMER INST PHYSICS
DOI: 10.1063/1.1756213
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High-dose phosphorus-ion (P+) implantation into 4H-SiC (0001) followed by high-temperature annealing has been investigated. Annealing with a graphite cap largely suppressed the surface roughening of implanted SiC. The surface stoichiometry of implanted SiC was examined by x-ray photoelectron spectroscopy. Electronic behaviors of P+-implanted SiC are discussed based on Hall effect measurements. There is no significant difference in the sheet resistance between SiC annealed with a graphite cap and without a graphite cap. The sheet resistance (resistivity) takes a minimum value of 45 Omega/square (0.9 mOmegacm) at an implant dose of 6.0x10(16) cm(-2). The sheet resistance shows a weak temperature dependence. (C) 2004 American Institute of Physics.
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