Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001)

High-dose phosphorus-ion (P+) implantation into 4H-SiC (0001) followed by high-temperature annealing has been investigated. Annealing with a graphite cap largely suppressed the surface roughening of implanted SiC. The surface stoichiometry of implanted SiC was examined by x-ray photoelectron spectroscopy. Electronic behaviors of P+-implanted SiC are discussed based on Hall effect measurements. There is no significant difference in the sheet resistance between SiC annealed with a graphite cap and without a graphite cap. The sheet resistance (resistivity) takes a minimum value of 45 Omega/square (0.9 mOmegacm) at an implant dose of 6.0x10(16) cm(-2). The sheet resistance shows a weak temperature dependence. (C) 2004 American Institute of Physics.