期刊
APPLIED SURFACE SCIENCE
卷 285, 期 -, 页码 115-120出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2013.07.163
关键词
GaN nanowires; Field emission; Joule heat effect; Work function; Surface adsorption
类别
资金
- National Natural Science Foundation of China (NSFC) [11274029, 11074017, 11274028, 51032002]
- Beijing Nova Program [2008B10]
- Beijing Natural Science Foundation [1102006]
- Importation and Development of High-Caliber Talents Project of Beijing Municipal Institutions [CIT82TCD201204037]
- Key Programs of Beijing Plan of Science and Technology [D121100001812002]
- Basic Research Foundation of Beijing University of Technology
Gallium nitride nanowires (GaN NWs) were synthesized by plasma-enhanced hot filament chemical vapor deposition under different ratios of nitrogen to hydrogen, which the GaN powder and nitrogen gas were used as the Ga and N sources. The characterization results indicate that the GaN NWs are grown in wurtzite crystalline structure with different length, diameters and surface adsorption. The field emission of GaN NWs was measured in the high vacuum condition of similar to 10(-6) Pa, which the results show that the turn-on field of GaN NWs changes from 0.86 to 2.8 V/mu m depending on their structures and the current density can reach up to 830 mu A/cm(2) at the field of 6 V/mu m. Combined the characterization results with the work function theory related to field emission, the origin of the field emission enhancement was analyzed, which associates with their surface potential and geometric structure. These results can enrich our knowledge on the field emission of GaN NWs and are highly related to the development of the next-generation of GaN nano-electronic devices. (C) 2013 Elsevier B.V. All rights reserved.
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