期刊
PHYSICAL REVIEW B
卷 70, 期 4, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.70.045313
关键词
-
We report a soft x-ray excited optical luminescence (XEOL) and x-ray emission spectroscopy (XES) study of silicon nanowires (SiNW) with excitations at the silicon K and L-3,L-2 edge, respectively. It is found that the XEOL of SiNW exhibits several luminescence bands at similar to460, similar to530, and similar to630 nm. These luminescence bands are broad and are sensitive to the Si 1s excitation channel (Si versus SiO2 whiteline). These chemical- and morphology-dependent luminescences are attributable to the emission from the encapsulating silicon oxide, the quantum-confined silicon crystallites of various sizes embedded in the oxide layer, and the silicon-silicon oxide interface. XES clearly shows the presence of a relatively thick oxide layer encapsulating the silicon nanowire and the densities of states tailing across the Fermi level. The implications of these findings to the electronic and optical properties of silicon nanowires are discussed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据