期刊
APPLIED SURFACE SCIENCE
卷 258, 期 7, 页码 2490-2497出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2011.10.079
关键词
TOF-SIMS; III-V semiconductors; Neutral cesium deposition; Work function; Secondary ion yield enhancement; Electronegativity
A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga+ bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P-emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions. (C) 2011 Elsevier B.V. All rights reserved.
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