期刊
APPLIED SURFACE SCIENCE
卷 258, 期 6, 页码 1971-1975出版社
ELSEVIER
DOI: 10.1016/j.apsusc.2011.05.101
关键词
Narrow walls; Graphene; FET; MEMS; Sensor
类别
资金
- National Natural Science Foundation of China [729092923040, 50975226]
- National Basic Research Program of China [2009CB724202]
- New Century Excellent Talents [NCET-08-0447]
- Fundamental Research Funds for the Central Universities
A new approach to the fabrication of back-gated graphene FET (field effect transistor) arrays on microchannels was investigated. Narrow walls fabricated on a substrate with SU-8 (a negative photoresist), with top metal electrodes were pressed onto another silicon/SiO2 substrate with predeposited graphene pieces such that the electrodes came into contact with graphene pieces and formed the source and drain contact. The SU-8 narrow walls with the top metal layer were fabricated by the conventional lift-off process. The graphene pieces were reduced chemically from graphite oxide. The I-DS changed immediately by more than 17% when the device was exposed to an ethanol atmosphere. The current recovered very well after the ethanol gas was pumped out. The SU-8 microchannels served as gas flow passages that helped the ethanol vapor reach the sensitive region of the device: the graphene channel. This work provides a convenient way of constructing back-gated graphene FETs for sensing applications. This method could potentially be scaled up for mass production. (C) 2011 Elsevier B. V. All rights reserved.
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